Infineon MOSFET, 150 A, 1200 V AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1

RS庫存編號:: 258-0847
製造零件編號:: FF08MR12W1MA1B11ABPSA1
製造商:: Infineon

Infineon MOSFET, 150 A, 1200 V AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1

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可享批量折扣

小計（1 件）*

TWD4,602.00

(不含稅)

TWD4,832.10

訂單超過 $1,300.00 免費送貨

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單位	每單位
1 - 1	TWD4,602.00
2 +	TWD4,510.00

* 參考價格

RS庫存編號:: 258-0847
製造零件編號:: FF08MR12W1MA1B11ABPSA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	150A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	AG-EASY1BS-1
	Maximum Drain Source Resistance Rds	9.8mΩ
	Forward Voltage Vf	5.95V
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Maximum Continuous Drain Current Id 150A
	Maximum Drain Source Voltage Vds 1200V
	Package Type AG-EASY1BS-1
	Maximum Drain Source Resistance Rds 9.8mΩ
	Forward Voltage Vf 5.95V
	Standards/Approvals No
	Automotive Standard No

Datasheet - FF08MR12W1MA1B11ABPSA1

The Infineon automotive CoolSiCTM EasyPACKTM1B is a half bridge module which combines the benefits of Infineon robust silicon carbide technology with a very compact and flexible package for hybrid and electric vehicles. The power module implements the new CoolSiCTM automotive MOSFET 1200V Gen1, optimized for high voltage applications like DC/DC converter and auxiliary inverter. The chipset offers benchmark current density, high block voltage and reduced switching losses, which allows compact designs and helps to improve system efficiency, as well as allows a reliable operation under harsh environmental conditions.

Intrinsic diode with low reverse recovery

Low stray inductance 5nH

Blocking voltage 1200V

Low switching losses

Integrated NTC temperature sensor

Infineon MOSFET, 150 A, 1200 V AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1

訂單超過 $1,300.00 免費送貨

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