Infineon FF6MR Type N-Channel MOSFET, 150 A, 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1
- RS庫存編號:
- 351-916
- 製造零件編號:
- FF6MR20W2M1HB70BPSA1
- 製造商:
- Infineon
小計（1 件）*
TWD26,457.00
(不含稅)
TWD27,779.85
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 15 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 + | TWD26,457.00 |
* 參考價格
- RS庫存編號:
- 351-916
- 製造零件編號:
- FF6MR20W2M1HB70BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | FF6MR | |
| Package Type | AG-EASY2B | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 48 mm | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Length | 62.8mm | |
| Height | 12.255mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series FF6MR | ||
Package Type AG-EASY2B | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 150°C | ||
Width 48 mm | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Length 62.8mm | ||
Height 12.255mm | ||
Automotive Standard No | ||
The Infineon EasyDUAL 2B CoolSiC MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, Press FIT Contact Technology and aluminum nitride ceramic.
Best in Class packages with 12mm height
Leading edge WBG material
Very low module stray inductance
Press FIT pins
Integrated NTC temperature sensor
Wide gate source voltage range
Low switching & conduction losses
相關連結
- Infineon Dual FF6MR 1 Type N-Channel MOSFET 1200 V Enhancement AG-62MM
- Infineon Dual FF6MR 1 Type N-Channel MOSFET 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B
- Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B
- Infineon FS75R12W2T7B11BOMA1 IGBT, 65 A 1200 V AG-EASY2B-711
- Infineon Isolated F4 Type N-Channel MOSFET 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1