Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1

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TWD16,136.00

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TWD16,942.80

(含稅)

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包裝方式:
RS庫存編號:
222-4796
製造零件編號:
FF6MR12KM1BOSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-62MM

Series

FF6MR

Mount Type

Chassis

Maximum Drain Source Resistance Rds

5.81mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

20mW

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.85V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.

High current density

Low switching losses

Superior gate oxide reliability

Highest robustness against humidity

Robust integrated body diode, and thus optimal thermal conditions

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