Infineon, Type N-Channel IGBT Module, 580 A 1200 V AG-62MM-1, Clamp

RS庫存編號:: 166-0902
製造零件編號:: FF400R12KE3HOSA1
製造商:: Infineon

Infineon, Type N-Channel IGBT Module, 580 A 1200 V AG-62MM-1, Clamp

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 托盤，共 10 件）*

TWD56,909.00

(不含稅)

TWD59,754.40

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2028年2月16日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每托盤*
10 - 10	TWD5,690.90	TWD56,909.00
20 +	TWD5,567.20	TWD55,672.00

* 參考價格

RS庫存編號:: 166-0902
製造零件編號:: FF400R12KE3HOSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	580A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	2000W
	Package Type	AG-62MM-1
	Mount Type	Clamp
	Channel Type	Type N
	Switching Speed	0.04μs
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Series	62_MMC
	Length	106.4mm
	Standards/Approvals	RoHS
	Height	30.9mm
	Width	61.4 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 580A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 2000W
	Package Type AG-62MM-1
	Mount Type Clamp
	Channel Type Type N
	Switching Speed 0.04μs
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Series 62_MMC
	Length 106.4mm
	Standards/Approvals RoHS
	Height 30.9mm
	Width 61.4 mm
	Automotive Standard No

COO (Country of Origin):: HU

Infineon IGBT Module, 580A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF400R12KE3HOSA1

This IGBT module is engineered to enhance performance in various industrial applications. With dimensions of 106.4 x 61.4 x 30.9 mm, it combines high efficiency with robust specifications, offering a maximum continuous collector current of 580A and a collector-emitter voltage rating of 1200V. Its design allows for effective integration into power electronic circuits, making it an Ideal choice for those requiring reliable modular IGBT solutions.

Features & Benefits

• Maximum gate-emitter voltage of ±20V provides operational flexibility

• High power dissipation capability of 2kW supports demanding requirements

• Designed for panel mounting, ensuring easy installation in various environments

• Series configuration optimises space and operational efficiency

Applications

• Utilised in inverter circuits for industrial machinery

• Optimised for renewable energy systems, such as solar inverters

• Effective in electric vehicles and propulsion systems

• Used in heavy-duty automation equipment where high current is VITAL

What are the thermal resistance specifications for this module?

The thermal resistance from junction to case is 0.062 K/W, and from case to heatsink is 0.031 K/W, ensuring effective heat dissipation during operation.

How does this IGBT module perform under varying temperatures?

With a maximum operating temperature of +125°C and a minimum of -40°C, it is suitable for diverse environmental conditions and demanding applications.

What are the implications of the high collector current rating?

A maximum continuous collector current rating of 580A means this IGBT module can handle significant power loads, making it Ideal for high current IGBT applications in industrial settings.

Can this module handle fast switching operations effectively?

Yes, the low gate capacitance of 28nF and specified gate drive capabilities enable efficient fast switching, increasing the performance of power electronic components in circuits.