Name: Infineon, Type N-Channel IGBT Module, 150 A 1200 V AG-34MM-1, Clamp
Brand: Infineon
SKU: 166-0838
Price: 4280.22 TWD
Availability: Discontinued

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	150A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	79W
	Package Type	AG-34MM-1
	Mount Type	Clamp
	Channel Type	Type N
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Operating Temperature	150°C
	Height	30.2mm
	Width	34 mm
	Standards/Approvals	RoHS
	Length	94mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 150A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 79W
	Package Type AG-34MM-1
	Mount Type Clamp
	Channel Type Type N
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Operating Temperature 150°C
	Height 30.2mm
	Width 34 mm
	Standards/Approvals RoHS
	Length 94mm
	Automotive Standard No

COO (Country of Origin):: MY

Infineon IGBT Module, 150A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF150R12RT4HOSA1

This IGBT module is designed for high-frequency switching applications, effectively combining two transistors in series configuration. It operates efficiently within a temperature range of -40°C to +150°C. With a Compact package size of 94 x 34 x 30.2 mm, this module is Ideal for integration into various industrial systems.

Features & Benefits

• Maximum continuous collector current rated at 150A ensures reliable performance

• Collector-emitter voltage supports up to 1200V for robust use

• Low switching losses enhance overall energy efficiency

• Isolated base plate improves thermal management and reliability

• AG-34MM-1 package type simplifies installation in panel-mounted configurations

Applications

• Suitable for motor drives in automation systems

• Utilised in uninterruptible power supplies for enhanced reliability

• Effective in high-frequency switching across industries

• Useful in power electronic converters for seamless operations

• Works well in conjunction with industrial automation frameworks

What are the thermal characteristics of this IGBT module?

The module features a thermal resistance from junction to case of 0.19 K/W, which is essential for maintaining operational efficiency. It also supports extensive power cycling with a specified 300,000 cycles at a junction temperature of 125°C and a temperature differential of 50K.

How does this IGBT module perform under high temperatures?

It operates effectively at a maximum junction temperature of 150°C, ensuring durability in demanding applications while maintaining a low VCEsat, which is further enhanced by a positive temperature coefficient for stable performance.

What makes the gate drive characteristics advantageous?

This IGBT module features a gate charge of 1.25μC, allowing for swift switching times, facilitating high-frequency operations essential in modern industrial applications. It also supports gate-emitter voltages of ±20V for flexible drive conditioning.

Is this product suitable for power electronics in automotive applications?

Yes, its robust specifications and reliability make it a viable option for power electronics in automotive systems where high efficiency and reliability are paramount.

Infineon, Type N-Channel IGBT Module, 150 A 1200 V AG-34MM-1, Clamp