Infineon Dual IGBT, 50 A 1200 V AG-34MM, Chassis
- RS庫存編號:
- 260-8887
- 製造零件編號:
- FF50R12RT4HOSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 10 件）*
TWD26,345.00
(不含稅)
TWD27,662.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2028年2月08日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 40 | TWD2,634.50 | TWD26,345.00 |
| 50 + | TWD2,555.50 | TWD25,555.00 |
* 參考價格
- RS庫存編號:
- 260-8887
- 製造零件編號:
- FF50R12RT4HOSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 285W | |
| Number of Transistors | 2 | |
| Configuration | Dual | |
| Package Type | AG-34MM | |
| Mount Type | Chassis | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 285W | ||
Number of Transistors 2 | ||
Configuration Dual | ||
Package Type AG-34MM | ||
Mount Type Chassis | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.
Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing
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