Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

可享批量折扣

小計(1 托盤,共 10 件)*

TWD26,345.00

(不含稅)

TWD27,662.20

(含稅)

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  • 2027年12月20日 發貨
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單位
每單位
每托盤*
10 - 40TWD2,634.50TWD26,345.00
50 +TWD2,555.50TWD25,555.00

* 參考價格

RS庫存編號:
260-8887
製造零件編號:
FF50R12RT4HOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

285 W

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.

Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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