Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis

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TWD12,748.00

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TWD13,385.40

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包裝方式:
RS庫存編號:
260-8893
製造零件編號:
FF600R12IP4BOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

600A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

20mW

Number of Transistors

2

Package Type

AG-PRIME2

Configuration

Dual

Mount Type

Chassis

Maximum Collector Emitter Saturation Voltage VceSAT

2.55V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and soft switching chip, also available with thermal interface material. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.

Extended operation temperature

High DC stability

High power density

Standardized housing

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