Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS庫存編號:
- 260-8891
- 製造零件編號:
- FF600R12IP4BOSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 托盤，共 3 件）*
TWD38,243.10
(不含稅)
TWD40,155.24
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 3 件從 2026年6月25日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 3 + | TWD12,747.70 | TWD38,243.10 |
* 參考價格
- RS庫存編號:
- 260-8891
- 製造零件編號:
- FF600R12IP4BOSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 600A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Dual | |
| Package Type | AG-PRIME2 | |
| Mount Type | Chassis | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 600A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Dual | ||
Package Type AG-PRIME2 | ||
Mount Type Chassis | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and soft switching chip, also available with thermal interface material. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing