Infineon FF600R12IE4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS庫存編號:
- 260-8890
- 製造零件編號:
- FF600R12IE4BOSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD12,858.00
(不含稅)
TWD13,500.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 7 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD12,858.00 |
| 2 + | TWD12,857.00 |
* 參考價格
- RS庫存編號:
- 260-8890
- 製造零件編號:
- FF600R12IE4BOSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 3.35kW | |
| Number of Transistors | 2 | |
| Package Type | AG-PRIME2 | |
| Configuration | Dual | |
| Mount Type | Chassis | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 3.35kW | ||
Number of Transistors 2 | ||
Package Type AG-PRIME2 | ||
Configuration Dual | ||
Mount Type Chassis | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing