Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis

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小計(1 托盤,共 3 件)*

TWD38,574.90

(不含稅)

TWD40,503.66

(含稅)

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RS庫存編號:
260-8889
製造零件編號:
FF600R12IE4BOSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

600A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

3.35kW

Number of Transistors

2

Package Type

AG-PRIME2

Configuration

Dual

Mount Type

Chassis

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.

Extended operation temperature

High DC stability

High power density

Standardized housing

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