Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

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小計(1 托盤,共 10 件)*

TWD56,980.00

(不含稅)

TWD59,829.00

(含稅)

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  • 2026年4月15日 發貨
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每單位
每托盤*
10 - 40TWD5,698.00TWD56,980.00
50 +TWD5,527.10TWD55,271.00

* 參考價格

RS庫存編號:
222-4793
製造零件編號:
FF600R12KE4BOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

600 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

1.2 kW

Configuration

Dual

Package Type

AG-62MM

Channel Type

N

Transistor Configuration

Common Emitter

The Infineon 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.

RoHS compliant
4 kV AC 1 min Insulation
Package with CTI > 400
High Creep age and Clearance Distances
UL/CSA Certification with UL1557 E83336

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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