Infineon F3L6MR Type N-Channel MOSFET, 375 A, 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1
- RS庫存編號:
- 351-915
- 製造零件編號:
- F3L6MR20W2M1HB70BPSA1
- 製造商:
- Infineon
小計（1 件）*
TWD20,658.00
(不含稅)
TWD21,690.90
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 + | TWD20,658.00 |
* 參考價格
- RS庫存編號:
- 351-915
- 製造零件編號:
- F3L6MR20W2M1HB70BPSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | AG-EASY2B | |
| Series | F3L6MR | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 6.15V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 12.255mm | |
| Length | 62.8mm | |
| Width | 48 mm | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type AG-EASY2B | ||
Series F3L6MR | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 6.15V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 12.255mm | ||
Length 62.8mm | ||
Width 48 mm | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Automotive Standard No | ||
The Infineon Easy pack 2B CoolSiC MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, Press FIT Contact Technology and aluminum nitride ceramic.
Very low module stray inductance
Press FIT pins
Integrated NTC temperature sensor
Wide gate source voltage range
Low switching & conduction losses
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