Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF
- RS庫存編號:
- 257-9324
- 製造零件編號:
- IRF7862TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD334.00
(不含稅)
TWD350.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,975 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD66.80 | TWD334.00 |
| 50 - 95 | TWD63.40 | TWD317.00 |
| 100 - 495 | TWD59.80 | TWD299.00 |
| 500 - 1995 | TWD55.20 | TWD276.00 |
| 2000 + | TWD51.00 | TWD255.00 |
* 參考價格
- RS庫存編號:
- 257-9324
- 製造零件編號:
- IRF7862TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 21A Maximum Continuous Drain Current - IRF7862TRPBF
This N-channel enhancement-mode MOSFET in an SO-8 package is a surface-mount power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and complies with RoHS, making it suitable for applications that require Compact, lead-free SMD power devices.
Features and Benefits:
• 4.5mΩ Rds(on) delivers low conduction losses under load
• 30V Vds enables mid-voltage power switching capability
• 21A continuous drain current supports high-current circuits
• 30nC typical gate charge allows moderate switching speed control
• 2.5W power dissipation manages thermal loading in tight spaces
• 30V Vds enables mid-voltage power switching capability
• 21A continuous drain current supports high-current circuits
• 30nC typical gate charge allows moderate switching speed control
• 2.5W power dissipation manages thermal loading in tight spaces
Applications
• Suitable for DC power distribution modules
• Ideal for board-level motor driver stages
• Used with voltage regulators for load switching
• Can be used for battery protection circuits
• Suitable for power management in Compact converters
• Ideal for board-level motor driver stages
• Used with voltage regulators for load switching
• Can be used for battery protection circuits
• Suitable for power management in Compact converters
What gate voltage limits must be observed?
The device must not exceed ±20V between gate and source to prevent gate dielectric stress.
How does the package affect thermal handling?
The SO-8 surface-mount package limits heat-sinking, so board copper and thermal vias are recommended to assist in dissipating the 2.5W allowable power.
What environmental temperature range can it withstand?
It is rated to operate from -55°C up to 150°C, suitable for wide-temperature deployments.
Is this device suitable for automotive qualification?
It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.
相關連結
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF
- Infineon Dual HEXFET 1 N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual HEXFET 1 N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8 IRF7831TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement SO-8 IRF6644TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF