Name: Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8
Brand: Infineon
SKU: 215-2587
Price: 13.86 TWD
Availability: OutOfStock

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	RoHS
	Width	4 mm
	Length	5mm
	Height	1.5mm
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals RoHS
	Width 4 mm
	Length 5mm
	Height 1.5mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - IRF8734TRPBF

The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application as Synchronous MOSFET for Notebook Processor Power and Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems.

Low Gate Charge

Fully Characterized Avalanche Voltage and Current

100% Tested for RG

Lead-Free

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8

相關連結