Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR
- RS庫存編號:
- 222-4608
- 製造零件編號:
- AUIRF7103QTR
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 10 件）*
TWD396.00
(不含稅)
TWD415.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,270 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD39.60 | TWD396.00 |
| 20 - 90 | TWD38.60 | TWD386.00 |
| 100 - 240 | TWD37.70 | TWD377.00 |
| 250 - 490 | TWD36.70 | TWD367.00 |
| 500 + | TWD34.10 | TWD341.00 |
* 參考價格
- RS庫存編號:
- 222-4608
- 製造零件編號:
- AUIRF7103QTR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
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