Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- RS庫存編號:
- 215-2588
- 製造零件編號:
- IRF8734TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD364.00
(不含稅)
TWD382.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 980 | TWD18.20 | TWD364.00 |
| 1000 - 1980 | TWD17.70 | TWD354.00 |
| 2000 + | TWD17.40 | TWD348.00 |
* 參考價格
- RS庫存編號:
- 215-2588
- 製造零件編號:
- IRF8734TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Width 4 mm | ||
Height 1.5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application as Synchronous MOSFET for Notebook Processor Power and Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems.
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
100% Tested for RG
Lead-Free
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