Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 215-2582
- 製造零件編號:
- IRF7311TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 4000 件）*
TWD72,000.00
(不含稅)
TWD75,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 16000 | TWD18.00 | TWD72,000.00 |
| 20000 + | TWD17.40 | TWD69,600.00 |
* 參考價格
- RS庫存編號:
- 215-2582
- 製造零件編號:
- IRF7311TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.72V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.72V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.
Generation V technology
Ultra low on resistance
Surface mount
Fully avalanche rated
Dual N-channel MOSFET
相關連結
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 50 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual HEXFET 1 Type N-Channel Power MOSFET 20 V Enhancement, 8-Pin SO-8