Name: Infineon HEXFET Type P-Channel MOSFET, -21 A, -30 V, 8-Pin PQFN IRFH9310TRPBF
Brand: Infineon
SKU: 257-5834
Price: 50.19 TWD
Availability: Discontinued

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-21A
	Maximum Drain Source Voltage Vds	-30V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.7mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Power Dissipation Pd	3.1W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	5mm
	Width	6 mm
	Standards/Approvals	RoHS
	Height	0.39mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -21A
	Maximum Drain Source Voltage Vds -30V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.7mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Power Dissipation Pd 3.1W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 5mm
	Width 6 mm
	Standards/Approvals RoHS
	Height 0.39mm
	Automotive Standard No

Datasheet - IRFH9310TRPBF

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

Infineon HEXFET Type P-Channel MOSFET, -21 A, -30 V, 8-Pin PQFN IRFH9310TRPBF

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