Infineon HEXFET Type P-Channel MOSFET, -21 A, -30 V, 8-Pin PQFN IRFH9310TRPBF
- RS庫存編號:
- 257-5834
- 製造零件編號:
- IRFH9310TRPBF
- 製造商:
- Infineon
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD239.00
(不含稅)
TWD250.95
(含稅)
添加 30 件 件可免費送貨
最後的 RS 庫存
- 最終 3,970 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD47.80 | TWD239.00 |
| 50 - 95 | TWD45.60 | TWD228.00 |
| 100 - 495 | TWD42.80 | TWD214.00 |
| 500 - 1995 | TWD39.80 | TWD199.00 |
| 2000 + | TWD36.60 | TWD183.00 |
* 參考價格
- RS庫存編號:
- 257-5834
- 製造零件編號:
- IRFH9310TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -21A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6 mm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Height | 0.39mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -21A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6 mm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Height 0.39mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
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