Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

RS庫存編號:: 130-1018
製造零件編號:: IRLHS2242TRPBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

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小計（1 包，共 25 件）*

TWD142.50

(不含稅)

TWD149.50

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 26,725 個，準備發貨

單位	每單位	每包*
25 - 975	TWD5.70	TWD142.50
1000 - 1975	TWD5.60	TWD140.00
2000 +	TWD5.20	TWD130.00

* 參考價格

RS庫存編號:: 130-1018
製造零件編號:: IRLHS2242TRPBF
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	53mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	9.6W
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Operating Temperature	150°C
	Width	2.1 mm
	Length	2.1mm
	Standards/Approvals	No
	Height	0.95mm
	Automotive Standard	No
	Distrelec Product Id	304-36-993

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 20V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 53mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 9.6W
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Operating Temperature 150°C
	Width 2.1 mm
	Length 2.1mm
	Standards/Approvals No
	Height 0.95mm
	Automotive Standard No
	Distrelec Product Id 304-36-993

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF

This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits

• Low Rds(on) ensures high efficiency and reduced heat generation

• Capable of handling continuous drain current of 7.2A for robust performance

• Compact 6-pin DFN package facilitates easy integration into limited spaces

• Enhancement mode operation allows for versatile design options

• Provides excellent thermal resistance for improved longevity

Applications

• Used for system/load switching in automation systems

• Ideal for charge and discharge switching in battery management

• Suitable for Compact electronic devices requiring high efficiency

• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?

The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.

How does this component manage thermal performance?

It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?

Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?

The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

What are the mounting requirements for optimal performance?

For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.