Infineon HEXFET Type P-Channel MOSFET, -21 A, -30 V, 8-Pin PQFN
- RS庫存編號:
- 257-5533
- 製造零件編號:
- IRFH9310TRPBF
- 製造商:
- Infineon
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此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 4000 件）*
TWD92,800.00
(不含稅)
TWD97,440.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 + | TWD23.20 | TWD92,800.00 |
* 參考價格
- RS庫存編號:
- 257-5533
- 製造零件編號:
- IRFH9310TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -21A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.39mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -21A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.39mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
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