Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN IRFHS8242TRPBF
- RS庫存編號:
- 257-5793
- 製造零件編號:
- IRFHS8242TRPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD337.50
(不含稅)
TWD354.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 6,825 件從 2026年1月05日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD13.50 | TWD337.50 |
| 50 - 75 | TWD12.80 | TWD320.00 |
| 100 - 475 | TWD12.10 | TWD302.50 |
| 500 - 1975 | TWD11.20 | TWD280.00 |
| 2000 + | TWD10.30 | TWD257.50 |
* 參考價格
- RS庫存編號:
- 257-5793
- 製造零件編號:
- IRFHS8242TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Width | 2 mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Distrelec Product Id | 304-40-531 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Width 2 mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Distrelec Product Id 304-40-531 | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
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