Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN IRFHS8242TRPBF

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TWD354.50

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25 - 25TWD13.50TWD337.50
50 - 75TWD12.80TWD320.00
100 - 475TWD12.10TWD302.50
500 - 1975TWD11.20TWD280.00
2000 +TWD10.30TWD257.50

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包裝方式:
RS庫存編號:
257-5793
製造零件編號:
IRFHS8242TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

25V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

13mΩ

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

2.1W

Typical Gate Charge Qg @ Vgs

4.3nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

2mm

Width

2 mm

Standards/Approvals

RoHS

Height

0.9mm

Distrelec Product Id

304-40-531

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

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