製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252

RS庫存編號:: 257-5548
製造零件編號:: IRFR7446TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2000 件）*

TWD26,200.00

(不含稅)

TWD27,520.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月08日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2000 - 2000	TWD13.10	TWD26,200.00
4000 +	TWD12.90	TWD25,800.00

* 參考價格

RS庫存編號:: 257-5548
製造零件編號:: IRFR7446TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	3.9mΩ
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	98W
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Maximum Drain Source Resistance Rds 3.9mΩ
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 98W
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFR7446TRPBF

The Infineon MOSFET improved gate, avalanche and dynamic dV/dt ruggedness and it’s used for OR-ing and redundant power switches and DC/DC and AC/DC converters, DC/AC Inverters.

Fully characterized capacitance and avalanche SOA

Enhanced body diode dv/dt and dI/dt Capability

Lead-Free

Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252

訂單超過 $1,300.00 免費送貨

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