Infineon iPB Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L07ATMA2

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小計(1 包,共 2 件)*

TWD104.00

(不含稅)

TWD109.20

(含稅)

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2 - 8TWD52.00TWD104.00
10 - 98TWD46.50TWD93.00
100 - 248TWD42.50TWD85.00
250 - 498TWD38.00TWD76.00
500 +TWD33.50TWD67.00

* 參考價格

包裝方式:
RS庫存編號:
249-6904
製造零件編號:
IPB80N06S4L07ATMA2
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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