Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 249-6905
- 製造零件編號:
- IPB80N08S2L07ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 1000 件)*
TWD90,100.00
(不含稅)
TWD94,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD90.10 | TWD90,100.00 |
| 2000 + | TWD85.60 | TWD85,600.00 |
* 參考價格
- RS庫存編號:
- 249-6905
- 製造零件編號:
- IPB80N08S2L07ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
Summary of Features
•N-channel Logic Level - Enhancement mode
•Automotive AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (lead free)
•Ultra low Rds(on)
•100% Avalanche tested
Benefits
•world's lowest RDS at 75V (on) in planar technology
•highest current capability
•lowest switching and conduction power losses for highest thermal efficiency
•robust packages with superior quality and reliability
•Optimized total gate charge enables smaller driver output stages
Potential Applications
•Valves control
•Solenoids control
•Lighting
•Single-ended motors
相關連結
- Infineon iPB Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IPB80N08S2L07ATMA1
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P4L08ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P4L06ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P405ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P407ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P4L04ATMA2
