Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1
- RS庫存編號:
- 249-6889
- 製造零件編號:
- IAUC60N04S6L030HATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD75.00
(不含稅)
TWD78.76
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 776 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD37.50 | TWD75.00 |
| 10 - 98 | TWD36.50 | TWD73.00 |
| 100 - 248 | TWD35.50 | TWD71.00 |
| 250 - 498 | TWD33.00 | TWD66.00 |
| 500 + | TWD32.50 | TWD65.00 |
* 參考價格
- RS庫存編號:
- 249-6889
- 製造零件編號:
- IAUC60N04S6L030HATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOS-TM6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOS-TM6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
相關連結
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1