Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 248-8937
- 製造零件編號:
- C3M0060065K
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD11,145.00
(不含稅)
TWD11,702.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD371.50 | TWD11,145.00 |
| 60 - 60 | TWD364.10 | TWD10,923.00 |
| 90 + | TWD356.80 | TWD10,704.00 |
* 參考價格
- RS庫存編號:
- 248-8937
- 製造零件編號:
- C3M0060065K
- 製造商:
- Wolfspeed
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 469W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Length | 23.63mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 469W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Length 23.63mm | ||
Automotive Standard No | ||
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The wolfspeeds 650V MOSFETs are optimised for high-performance power electronics applications, including server power supplies, electric vehicle charging systems and many more.
3rd Generation SiC MOSFET technology
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
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