製造零件編號

Wolfspeed Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 3-Pin TO-247

RS庫存編號:: 919-9749
製造零件編號:: C2M0080120D
製造商:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD25,920.00

(不含稅)

TWD27,216.00

訂單超過 $1,300.00 免費送貨

有庫存

450 件準備從其他地點送貨
加上 360 件從 2026年1月08日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 120	TWD864.00	TWD25,920.00
150 +	TWD846.70	TWD25,401.00

* 參考價格

RS庫存編號:: 919-9749
製造零件編號:: C2M0080120D
製造商:: Wolfspeed

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	208mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	208W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	49.2nC
	Forward Voltage Vf	4.3V
	Maximum Operating Temperature	150°C
	Height	21.1mm
	Width	5.21 mm
	Standards/Approvals	No
	Length	16.13mm
	Automotive Standard	No

	選取全部
	品牌 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 208mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 208W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 49.2nC
	Forward Voltage Vf 4.3V
	Maximum Operating Temperature 150°C
	Height 21.1mm
	Width 5.21 mm
	Standards/Approvals No
	Length 16.13mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

Wolfspeed Silicon Carbide Power MOSFETs

MOSFET Transistors, Wolfspeed

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