製造零件編號

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0021120K

RS庫存編號:: 248-8925
製造零件編號:: C3M0021120K
製造商:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0021120K

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可享批量折扣

小計（1 件）*

TWD1,045.00

(不含稅)

TWD1,097.25

訂單超過 $1,300.00 免費送貨

暫時缺貨

30 件從 2026年4月02日起裝運發貨

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單位	每單位
1 - 1	TWD1,045.00
2 - 4	TWD1,025.00
5 - 9	TWD1,003.00
10 - 14	TWD984.00
15 +	TWD964.00

* 參考價格

RS庫存編號:: 248-8925
製造零件編號:: C3M0021120K
製造商:: Wolfspeed

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.7A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	15 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	162nC
	Maximum Power Dissipation Pd	469W
	Maximum Operating Temperature	175°C
	Width	16.13 mm
	Length	23.63mm
	Height	5.21mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.7A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 15 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 162nC
	Maximum Power Dissipation Pd 469W
	Maximum Operating Temperature 175°C
	Width 16.13 mm
	Length 23.63mm
	Height 5.21mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - C3M0021120K

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency

3rd generation SiC MOSFET technology

Low impedance package with driver source pin

8mm of creepage distance between drain and source

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Qrr)

Halogen free, RoHS compliant

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0021120K

訂單超過 $1,300.00 免費送貨

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