Infineon IPD N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1
- RS庫存編號:
- 244-0881
- 製造零件編號:
- IPD95R750P7ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD72,500.00
(不含稅)
TWD76,125.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD29.00 | TWD72,500.00 |
| 5000 + | TWD28.10 | TWD70,250.00 |
* 參考價格
- RS庫存編號:
- 244-0881
- 製造零件編號:
- IPD95R750P7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 100V Drain Source Voltage, 180A Continuous Drain Current - IPD95R750P7ATMA1
This MOSFET is a high-current switching transistor designed for surface-mounted power applications, operating across a wide temperature range suitable for demanding environments. It is an N-channel device packaged in a TO-252 format and intended for use where robust gate drive and significant continuous drain current are required.
Features and Benefits:
• 100V drain withstand supports high-voltage switching
• 180A continuous drain current enables heavy-load handling
• 0.7mΩ RDS(on) minimises conduction losses under load
• 81W power dissipation allows sustained power delivery
• 80nC gate charge balances switching speed and drive requirements
• 20V gate rating provides headroom for common gate drives
• 180A continuous drain current enables heavy-load handling
• 0.7mΩ RDS(on) minimises conduction losses under load
• 81W power dissipation allows sustained power delivery
• 80nC gate charge balances switching speed and drive requirements
• 20V gate rating provides headroom for common gate drives
Applications
• Suitable for automotive power distribution modules
• Ideal for motor drive stages in electrified systems
• Used with DC-DC converters in high-current supplies
• Can be used for battery protection and management
• Suitable for high-power switching in industrial inverters
• Ideal for motor drive stages in electrified systems
• Used with DC-DC converters in high-current supplies
• Can be used for battery protection and management
• Suitable for high-power switching in industrial inverters
What temperature range can it reliably operate within?
It is rated to function from -55°C up to +150°C for extended operating conditions.
How does the pin configuration affect mounting?
The three-pin arrangement in a TO-252 surface-mount package facilitates Compact PCB layouts and efficient thermal conduction to the board.
What material or approval indicates restricted-substance compliance?
It meets RoHS requirements for restricted substances in electronic assemblies.
Is the device suitable for automotive qualification criteria?
It conforms to AEC-Q101 standards applicable to discrete semiconductors for automotive use.
相關連結
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD60R145CFD7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1