Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252

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小計(1 卷,共 2500 件)*

TWD71,750.00

(不含稅)

TWD75,350.00

(含稅)

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  • 2026年5月29日 發貨
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2500 - 2500TWD28.70TWD71,750.00
5000 +TWD27.80TWD69,500.00

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RS庫存編號:
244-8550
製造零件編號:
IPD80R450P7ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection

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