Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1
- RS庫存編號:
- 244-0883
- 製造零件編號:
- IPD95R750P7ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD101.00
(不含稅)
TWD106.04
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,352 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD50.50 | TWD101.00 |
| 10 - 98 | TWD49.50 | TWD99.00 |
| 100 - 248 | TWD48.50 | TWD97.00 |
| 250 - 498 | TWD47.00 | TWD94.00 |
| 500 + | TWD45.50 | TWD91.00 |
* 參考價格
- RS庫存編號:
- 244-0883
- 製造零件編號:
- IPD95R750P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOM RDS(on) * Eoss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V
Fully optimized portfolio
Integrated Zener Diode ESD protection
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