STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 240-0615
- 製造零件編號:
- STWA75N65DM6
- 製造商:
- STMicroelectronics
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TWD12,114.00
(不含稅)
TWD12,719.70
(含稅)
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 30 - 30 | TWD403.80 | TWD12,114.00 |
| 60 - 60 | TWD391.70 | TWD11,751.00 |
| 90 + | TWD380.00 | TWD11,400.00 |
* 參考價格
- RS庫存編號:
- 240-0615
- 製造零件編號:
- STWA75N65DM6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-247 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 480W | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-247 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 480W | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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