STMicroelectronics STW Type N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4
- RS庫存編號:
- 275-1381
- 製造零件編號:
- STW65N023M9-4
- 製造商:
- STMicroelectronics
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|---|---|---|
| 30 - 90 | TWD602.70 | TWD18,081.00 |
| 120 + | TWD590.70 | TWD17,721.00 |
* 參考價格
- RS庫存編號:
- 275-1381
- 製造零件編號:
- STW65N023M9-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 92A | |
| Package Type | TO-247-4 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 463W | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.8 mm | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 92A | ||
Package Type TO-247-4 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 463W | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 15.8 mm | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
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