STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
- RS庫存編號:
- 719-468
- 製造零件編號:
- SCT018W65G3AG
- 製造商:
- STMicroelectronics
N
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- RS庫存編號:
- 719-468
- 製造零件編號:
- SCT018W65G3AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HIP-247-3 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 398W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 200°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HIP-247-3 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 398W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 200°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
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