Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 VP2206N3-G

RS庫存編號:: 239-5621
製造零件編號:: VP2206N3-G
製造商:: Microchip

Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 VP2206N3-G

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TWD409.00

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TWD429.45

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500 +	TWD74.20	TWD371.00

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RS庫存編號:: 239-5621
製造零件編號:: VP2206N3-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	10.3A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-92
	Series	VP2206
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 10.3A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-92
	Series VP2206
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP2206N3-G

The Microchip VP2206 series are enhancement-mode (normally-off) transistors which utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. These vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

It has a Free from secondary breakdown

It has a Low power drive requirement

It offers an ease of paralleling, low CISS and fast switching speeds

It has high input impedance and high gain with excellent thermal stability

It has an integral source-to-drain diode

Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 VP2206N3-G

訂單超過 $1,300.00 免費送貨

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