Microchip VN0300 Type N-Channel MOSFET, 640 mA, 30 V Enhancement, 3-Pin TO-92

RS庫存編號:: 177-9705
製造零件編號:: VN0300L-G
製造商:: Microchip

Microchip VN0300 Type N-Channel MOSFET, 640 mA, 30 V Enhancement, 3-Pin TO-92

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RS庫存編號:: 177-9705
製造零件編號:: VN0300L-G
製造商:: Microchip

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	640mA
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-92
	Series	VN0300
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	4.06 mm
	Height	5.33mm
	Length	5.08mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 640mA
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-92
	Series VN0300
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 4.06 mm
	Height 5.33mm
	Length 5.08mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 30V. It has drain-source resistance of 1.2ohms at a gate-source voltage of 10V. It has continuous drain current of 640mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC