Microchip VN3205 Type N-Channel MOSFET, 50 V Enhancement, 3-Pin TO-92 VN3205N3-G
- RS庫存編號:
- 333-225
- 製造零件編號:
- VN3205N3-G
- 製造商:
- Microchip
小計(1 袋,共 1000 件)*
TWD84,800.00
(不含稅)
TWD89,040.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 從 2026年2月16日 發貨
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單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 + | TWD84.80 | TWD84,800.00 |
* 參考價格
- RS庫存編號:
- 333-225
- 製造零件編號:
- VN3205N3-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | TO-92 | |
| Series | VN3205 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type TO-92 | ||
Series VN3205 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip Enhancement mode transistor uses a vertical DMOS structure and a well proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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