Microchip VN3205 Type N-Channel MOSFET, 1.5 A, 50 V MOSFET, 3-Pin SOT-89 VN3205N8-G
- RS庫存編號:
- 264-8947
- 製造零件編號:
- VN3205N8-G
- 製造商:
- Microchip
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD294.00
(不含稅)
TWD308.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,910 件從 2026年1月12日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD58.80 | TWD294.00 |
| 50 - 95 | TWD44.40 | TWD222.00 |
| 100 - 245 | TWD43.40 | TWD217.00 |
| 250 - 995 | TWD42.60 | TWD213.00 |
| 1000 + | TWD41.60 | TWD208.00 |
* 參考價格
- RS庫存編號:
- 264-8947
- 製造零件編號:
- VN3205N8-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-89 | |
| Series | VN3205 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-89 | ||
Series VN3205 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
相關連結
- Microchip VN3205 Type N-Channel MOSFET 50 V MOSFET, 3-Pin SOT-89
- Microchip VN3205 Type N-Channel MOSFET 3-Pin TO-92 VN3205N3-G
- Microchip TN2524 Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-89
- Microchip TN2524 Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-89 TN2524N8-G
- Microchip TP2510 Type P-Channel MOSFET 3-Pin SOT-89 TP2510N8-G
- Microchip VP2450 Type P-Channel MOSFET 500 V Enhancement, 3-Pin SOT-89
- Microchip VP2450 Type P-Channel MOSFET 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G
- ROHM N-Channel MOSFET 30 V, 3-Pin SOT-89 RHP030N03T100
