Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89

RS庫存編號:: 177-9709
製造零件編號:: VP2450N8-G
製造商:: Microchip

Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89

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可享批量折扣

小計（1 卷，共 2000 件）*

TWD85,800.00

(不含稅)

TWD90,080.00

訂單超過 $1,300.00 免費送貨

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從 2026年3月02日發貨

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單位	每單位	每卷*
2000 - 8000	TWD42.90	TWD85,800.00
10000 +	TWD42.00	TWD84,000.00

* 參考價格

RS庫存編號:: 177-9709
製造零件編號:: VP2450N8-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	160mA
	Maximum Drain Source Voltage Vds	500V
	Series	VP2450
	Package Type	SOT-89
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	35Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.8V
	Maximum Operating Temperature	150°C
	Width	2.6 mm
	Length	4.6mm
	Height	1.6mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 160mA
	Maximum Drain Source Voltage Vds 500V
	Series VP2450
	Package Type SOT-89
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 35Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.8V
	Maximum Operating Temperature 150°C
	Width 2.6 mm
	Length 4.6mm
	Height 1.6mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: US

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89

訂單超過 $1,300.00 免費送貨

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