Microchip TP0610T Type P-Channel MOSFET, 60 V Enhancement, 3-Pin SOT-23 TP0610T-G
- RS庫存編號:
- 333-219
- 製造零件編號:
- TP0610T-G
- 製造商:
- Microchip
小計(1 卷,共 3000 件)*
TWD142,200.00
(不含稅)
TWD149,310.00
(含稅)
訂單超過 $1,300.00 免費送貨
新產品 - 立即預訂
- 從 2026年2月16日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD47.40 | TWD142,200.00 |
* 參考價格
- RS庫存編號:
- 333-219
- 製造零件編號:
- TP0610T-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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