Microchip Type P-Channel MOSFET, 250 mA, 60 V Enhancement, 3-Pin TO-92
- RS庫存編號:
- 165-4218
- 製造零件編號:
- VP2106N3-G
- 製造商:
- Microchip
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可享批量折扣
小計（1 袋，共 1000 件）*
TWD13,900.00
(不含稅)
TWD14,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,000 件從 2026年3月24日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 - 4000 | TWD13.90 | TWD13,900.00 |
| 5000 + | TWD13.20 | TWD13,200.00 |
* 參考價格
- RS庫存編號:
- 165-4218
- 製造零件編號:
- VP2106N3-G
- 製造商:
- Microchip
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.08mm | |
| Width | 4.06 mm | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.08mm | ||
Width 4.06 mm | ||
Height 5.33mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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