Microchip TP0620 Type P-Channel MOSFET, -175 A, 200 V Enhancement, 3-Pin TO-92
- RS庫存編號:
- 264-8926
- 製造零件編號:
- TP0620N3-G
- 製造商:
- Microchip
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 袋,共 1000 件)*
TWD45,500.00
(不含稅)
TWD47,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年2月16日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 + | TWD45.50 | TWD45,500.00 |
* 參考價格
- RS庫存編號:
- 264-8926
- 製造零件編號:
- TP0620N3-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -175A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-92 | |
| Series | TP0620 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -175A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-92 | ||
Series TP0620 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
相關連結
- Microchip TP0620 Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-92 TP0620N3-G
- Microchip Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-92
- Microchip Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-92 TP2104N3-G
- Microchip TN2540 Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-92
- Microchip TN2540 Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-92 TN2540N3-G
- Microchip VP3203 Type P-Channel MOSFET 3-Pin TO-92 VP3203N3-G
- Microchip LP0701 Type P-Channel MOSFET 3-Pin TO-92 LP0701N3-G
- Microchip Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-92
