製造零件編號

Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3

RS庫存編號:: 239-5408
製造零件編號:: SQJ182EP-T1_GE3
製造商:: Vishay

Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD70,500.00

(不含稅)

TWD74,040.00

訂單超過 $1,300.00 免費送貨

供應短缺

3,000 件準備從其他地點送貨

我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。

單位	每單位	每卷*
3000 - 12000	TWD23.50	TWD70,500.00
15000 +	TWD22.80	TWD68,400.00

* 參考價格

RS庫存編號:: 239-5408
製造零件編號:: SQJ182EP-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	80V
	Series	SQJ
	Package Type	PowerPAK SO-8L
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.005Ω
	Typical Gate Charge Qg @ Vgs	64nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	395W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Width	4.9 mm
	Length	6.15mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 80V
	Series SQJ
	Package Type PowerPAK SO-8L
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.005Ω
	Typical Gate Charge Qg @ Vgs 64nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 395W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Width 4.9 mm
	Length 6.15mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - SQJ182EP-T1_GE3

The Vishay N channel MOSFET has drain current of 210 A.

AEC-Q101 qualified

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3

訂單超過 $1,300.00 免費送貨

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