Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3
- RS庫存編號:
- 239-8671
- 製造零件編號:
- SQJ186EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD243.00
(不含稅)
TWD255.20
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD24.30 | TWD243.00 |
| 50 - 90 | TWD23.90 | TWD239.00 |
| 100 - 240 | TWD23.50 | TWD235.00 |
| 250 - 990 | TWD23.10 | TWD231.00 |
| 1000 + | TWD22.80 | TWD228.00 |
* 參考價格
- RS庫存編號:
- 239-8671
- 製造零件編號:
- SQJ186EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 410A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 125°C | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 410A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 125°C | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
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