Vishay TrenchFET Dual N-Channel Automotive MOSFET, 21 A, 60 V MOSFET, 4-Pin PowerPAK SO-8L SQJ768ELP-T1_GE3

N

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小計(1 組,共 10 件)*

TWD488.00

(不含稅)

TWD512.40

(含稅)

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單位
每單位
每膠帶*
10 - 40TWD48.80TWD488.00
50 +TWD47.80TWD478.00

* 參考價格

RS庫存編號:
790-425
製造零件編號:
SQJ768ELP-T1_GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Automotive MOSFET

Channel Type

Dual N-Channel

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8L

Series

TrenchFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.0305Ω

Channel Mode

MOSFET

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

35W

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay Automotive dual N-channel power MOSFET offers robust performance across a wide temperature range, designed to efficiently manage switching and drive applications in automotive systems.

TrenchFET power MOSFET technology ensuring efficient operation

AEC Q101 qualified for reliability in automotive applications

100% R and UIS tested for guaranteed performance assurance

Low on-state resistance values contribute to improved efficiency

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