Vishay TrenchFET N channel-Channel Automotive MOSFET, 58 A, 100 V MOSFET, 8-Pin PowerPAK SO-8L SQJ114EP-T1_GE3
- RS庫存編號:
- 790-423
- 製造零件編號:
- SQJ114EP-T1_GE3
- 製造商:
- Vishay
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* 參考價格
- RS庫存編號:
- 790-423
- 製造零件編號:
- SQJ114EP-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Automotive MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0119Ω | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 115W | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Automotive MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0119Ω | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 115W | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Automotive N-Channel MOSFET delivers superior performance as a power switching device. It is designed for high-efficiency applications, offering excellent thermal performance and drive capabilities.
PowerPAK SO-8L package for Compact design
AEC Q101 qualified for automotive applications
Drain-source voltage rating of 100V ensures reliability
Ultra-low on-state resistance of 0.0119Ω at 10V enhances efficiency
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