Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- RS庫存編號:
- 239-5409
- 製造零件編號:
- SQJ182EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD192.00
(不含稅)
TWD201.60
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 3,000 件準備從其他地點送貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD38.40 | TWD192.00 |
| 50 - 95 | TWD37.20 | TWD186.00 |
| 100 - 245 | TWD36.20 | TWD181.00 |
| 250 - 995 | TWD35.20 | TWD176.00 |
| 1000 + | TWD34.20 | TWD171.00 |
* 參考價格
- RS庫存編號:
- 239-5409
- 製造零件編號:
- SQJ182EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQJ | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 395W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Length | 6.15mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQJ | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 395W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Length 6.15mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Vishay N channel MOSFET has drain current of 210 A.
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
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