Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L

RS庫存編號:: 180-7403
製造零件編號:: SQJ457EP-T1_GE3
製造商:: Vishay

Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD57,600.00

(不含稅)

TWD60,480.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月08日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD19.20	TWD57,600.00
15000 +	TWD18.80	TWD56,400.00

* 參考價格

RS庫存編號:: 180-7403
製造零件編號:: SQJ457EP-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	60V
	Series	SQJ
	Package Type	PowerPAK SO-8L
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.025Ω
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Transistor Configuration	Single
	Maximum Operating Temperature	175°C
	Length	6.15mm
	Height	1.14mm
	Width	5.13 mm
	Standards/Approvals	AEC-Q101
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 60V
	Series SQJ
	Package Type PowerPAK SO-8L
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.025Ω
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Transistor Configuration Single
	Maximum Operating Temperature 175°C
	Length 6.15mm
	Height 1.14mm
	Width 5.13 mm
	Standards/Approvals AEC-Q101
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

Certifications

• AEC-Q101 qualified

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested