Vishay Single 1 Type N-Channel MOSFET, 42 A, 100 V, 8-Pin PowerPAK SO-8L SQJ488EP-T1_GE3
- RS庫存編號:
- 180-8020
- 製造零件編號:
- SQJ488EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD421.00
(不含稅)
TWD442.00
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 加上 2,980 件從 2026年1月12日 起發貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD42.10 | TWD421.00 |
| 750 - 1490 | TWD41.10 | TWD411.00 |
| 1500 + | TWD40.50 | TWD405.00 |
* 參考價格
- RS庫存編號:
- 180-8020
- 製造零件編號:
- SQJ488EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8L | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.25 mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.14mm | |
| Length | 5.25mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8L | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Width 6.25 mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1.14mm | ||
Length 5.25mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay SQJ457EP is a automotive N-channel 175°C maximum junction temperature MOSFET having drain to source(Vds) voltage of 100V. The gate to source voltage(VGS) is 20V. It is having Power PAK SO-8L package. It offers drain to source resistance (RDS.) 0.021ohms at 10VGS and 0.0258ohms at 4.5VGS. Maximum drain current 42A.
Trench FET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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