Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- RS庫存編號:
- 239-5397
- 製造零件編號:
- SISA10BDN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD50,700.00
(不含稅)
TWD53,220.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 6,000 件從 2026年8月10日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD16.90 | TWD50,700.00 |
| 15000 + | TWD16.40 | TWD49,200.00 |
* 參考價格
- RS庫存編號:
- 239-5397
- 製造零件編號:
- SISA10BDN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8PT | |
| Series | SISA10BDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0036Ω | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Height | 0.75mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8PT | ||
Series SISA10BDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0036Ω | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Height 0.75mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3
This n-channel MOSFET is a surface-mount power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments where efficient conduction and fast gate response are required. The device is offered in a low-profile package optimised for assembly onto densely populated boards.
Features and Benefits:
• Very low on-resistance 0.0036Ω enables reduced conduction losses
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages
Applications
• Suitable for synchronous buck regulator switching stages
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules
What mounting method is required for reliable assembly?
It is a surface-mount component in a PowerPAK 1212-8PT format, intended for reflow soldering to a PCB footprint designed for thermal and electrical contact.
How does ambient temperature affect operating capability?
The device is specified to function from -55°C up to 150°C, permitting operation in both sub-zero and elevated-temperature environments with appropriate thermal management.
What type of conduction channel does it use?
It employs an N-type channel, which is suitable for low-voltage, high-current switching applications.
Is the device compliant with environmental restrictions?
It meets RoHS requirements, indicating it lacks restricted hazardous substances under the standard.
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